(1) 碳纳米管束中的正电子理论
陈祥磊，郗传英，叶邦角，翁惠民；
物理学报, 56 (11): 6695-6700 NOV 2007
 
(2) Influence of GaN polarity and intermediate-temperature buffer layers on strain relaxation and defects
Peng, C. X. Weng, H. M.，Zhu, C. F.，Ye, B. J.，Zhou, X. Y.，Han, R. D.，Fong, W. K.，Surya, C.；
PHYSICA B-CONDENSED MATTER, 391 (1): 6-11 MAR 15 2007